7N Tellurium Crystal Growth ati ìwẹnumọ

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7N Tellurium Crystal Growth ati ìwẹnumọ

7N Tellurium Crystal Growth ati ìwẹnumọ


Emi. Itọju Ohun elo Aise ati Iwẹwẹ Alakoko

  1. oAṣayan Ohun elo Aise ati fifọo
  • oOhun elo Awọn ibeere‌: Lo tellurium ore tabi anode slime (Te akoonu ≥5%), pelu Ejò smelting anode slime (ti o ni Cu₂Te, Cu₂Se) bi ohun elo aise.
  • oIlana Itọju Pretreatment:
  • Irẹjẹ isokuso si iwọn patiku ≤5mm, atẹle nipa milling rogodo si ≤200 mesh;
  • Iyapa oofa (agbara aaye oofa ≥0.8T) lati yọ Fe, Ni, ati awọn impurities oofa miiran kuro;
  • Froth flotation (pH = 8-9, awọn olugba xanthate) lati ya SiO₂, CuO, ati awọn idoti ti kii ṣe oofa miiran.
  • oÀwọn ìṣọ́ra‌: Yẹra fun iṣafihan ọrinrin lakoko itọju tutu (nbeere gbigbe ṣaaju sisun); iṣakoso ọriniinitutu ibaramu ≤30%.
  1. oPirometallurgical Roasting ati Oxidationo
  • oIlana Ilana:
  • Oxidation roasting otutu: 350-600 ° C (iṣakoso ipele: iwọn otutu kekere fun desulfurization, iwọn otutu giga fun ifoyina);
  • Akoko sisun: Awọn wakati 6-8, pẹlu oṣuwọn sisan O₂ ti 5-10 L / min;
  • Reagent: sulfuric acid ogidi (98% H₂SO₄), ibi-ipin Te₂SO₄ = 1:1.5 .
  • oKemikali lenu:
    Cu2Te+2O2+2H2SO4→2CuSO4+TeO2+2H2OCu2Te+2O2+2H2SO4→2CuSO4+TeO2+2H2O
  • oÀwọn ìṣọ́ra‌: Iṣakoso iwọn otutu ≤600 ° C lati dena iyipada TeO₂ (ojuami farabale 387 ° C); tọju gaasi eefin pẹlu awọn scrubbers NaOH.

II. Electrorefining ati Igbale Distillation‌

  1. oElectrorefiningo
  • oElectrolyte System:
  • Electrolyte tiwqn: H₂SO₄ (80-120g/L), TeO₂ (40-60g/L), aropo (gellatin 0.1-0.3g/L);
  • Iṣakoso iwọn otutu: 30-40°C, iwọn sisan san kaakiri 1.5-2 m³/h.
  • oIlana Ilana:
  • Iwọn lọwọlọwọ: 100-150 A/m², foliteji sẹẹli 0.2-0.4V;
  • Aye elekitirode: 80-120mm, sisanra idalẹnu cathode 2-3mm / 8h;
  • Ṣiṣe yiyọkuro aimọ: Cu ≤5ppm, Pb ≤1ppm.
  • oÀwọn ìṣọ́ra‌: Electrolyte àlẹmọ nigbagbogbo (ipe ≤1μm); awọn roboto anode didan ẹrọ lati ṣe idiwọ passivation.
  1. oIgbale Distillationo
  • oIlana Ilana:
  • Ipele igbale: ≤1×10⁻²Pa, distillation otutu 600-650°C;
  • Iwọn otutu agbegbe condenser: 200-250 ° C, Te vapor condensation ṣiṣe ≥95%;
  • Akoko distillation: 8-12h, agbara ipele-ọkan ≤50kg.
  • oPinpin aimọ‌: Kekere-farabalẹ impurities (Se, S) accumulate ni iwaju condenser; awọn impurities ti nbo ga (Pb, Ag) wa ninu awọn iṣẹku.
  • oÀwọn ìṣọ́ra‌: Eto igbale-iṣaaju si ≤5×10⁻³Pa ṣaaju ki o to alapapo lati ṣe idiwọ Te oxidation.

III. Growth Crystal (Itọsọna Crystallization)‌

  1. oIṣeto ni Equipmento
  • oCrystal Growth Furnace Models‌: TDR-70A/B (agbara 30kg) tabi TRDL-800 (agbara 60kg);
  • Ohun elo crucible: graphite ti o ga julọ (akoonu eeru ≤5ppm), awọn iwọn Φ300 × 400mm;
  • Ọna gbigbona: Alapapo resistance Graphite, iwọn otutu ti o pọju 1200°C.
  1. oIlana Ilanao
  • oYo Iṣakoso:
  • yo otutu: 500-520 ° C, yo o pool ijinle 80-120mm;
  • Gaasi aabo: Ar (mimọ ≥99.999%), oṣuwọn sisan 10-15 L / min.
  • oAwọn paramita Crystallization:
  • Iwọn fifa: 1-3mm / h, iyara yiyi gara 8-12rpm;
  • Iwọn iwọn otutu: Axial 30-50 ° C / cm, radial ≤10 ° C / cm;
  • Ọna itutu agbaiye: Ipilẹ bàbà ti omi tutu (iwọn otutu omi 20-25°C), itutu agbaiye radiative oke.
  1. oIṣakoso aimọo
  • oIpa Iyapa‌: Awọn idọti bi Fe, Ni (alaiye ipinya <0.1) ṣajọpọ ni awọn aala ọkà;
  • oRemelting Yiyi‌: 3-5 awọn iyipo, ipari lapapọ awọn impurities ≤0.1ppm.
  1. oÀwọn ìṣọ́ra:
  • Bo dada yo pẹlu awọn awo graphite lati dinku Te volatilisation (oṣuwọn isonu ≤0.5%);
  • Bojuto iwọn ila opin gara ni akoko gidi nipa lilo awọn wiwọn laser (ipese ± 0.1mm);
  • Yago fun awọn iyipada iwọn otutu>±2°C lati ṣe idiwọ ilosoke iwuwo dislocation (afojusun ≤10³/cm²) .

IV. Ayewo Didara ati Awọn Metiriki bọtini

Nkan Idanwo

Iye Standard

Ọna Idanwo

Orisun

oMimoo

≥99.99999% (7N)

ICP-MS

oLapapọ Metallic impuritieso

≤0.1pm

GD-MS (Glow Discharge Mass Spectrometry)

oAtẹgun Akoonuo

≤5ppm

Inert Gas Fusion-IR Absorption

oCrystal iyegeo

Ìwọ̀n Ìpakúpa ≤10³/cm²

X-ray Topography

oAtako (300K)o

0.1–0.3Ω·cm

Mẹrin-Iwadii Ọna


V. Awọn Ilana Ayika ati Aabo

  1. oEefi Gas Itoju:
  • Imukuro sisun: Yẹ SO₂ ati SeO₂ duro pẹlu NaOH scrubbers (pH≥10);
  • Igbale distillation eefi: Condense ati ki o bọsipọ Te oru; awọn gaasi ti o ku ti a so pọ nipasẹ erogba ti a mu ṣiṣẹ.
  1. oSlag atunlo:
  • Anode slime (ti o ni Ag, Au): Bọsipọ nipasẹ hydrometallurgy (H₂SO₄-HCl eto);
  • Awọn iṣẹku elekitirolisisi (ti o ni Pb, Cu): Pada si awọn ọna ṣiṣe didan bàbà.
  1. oAwọn Igbesẹ Aabo:
  • Awọn oniṣẹ gbọdọ wọ awọn iboju iparada (Te vapor is majele); ṣetọju fentilesonu titẹ odi (oṣuwọn paṣipaarọ afẹfẹ ≥10 awọn iyipo / h) .

Awọn Itọsọna Imudara Ilana

  1. oAise ohun elo aṣamubadọgba‌: Ṣatunṣe iwọn otutu sisun ati ipin acid ni agbara ti o da lori awọn orisun slime anode (fun apẹẹrẹ, Ejò vs. gbigbo asiwaju);
  2. oCrystal Nfa Rate ibamu‌: Ṣatunṣe iyara fifa ni ibamu si convection yo (nọmba Reynolds Re≥2000) lati dinku supercooling t’olofin;
  3. oLilo Agbara‌: Lo alapapo agbegbe otutu-meji (agbegbe akọkọ 500°C, agbegbe-ipin 400°C) lati dinku agbara agbara resistance graphite nipasẹ 30%.

Akoko ifiweranṣẹ: Mar-24-2025