7N Tellurium Crystal Growth and Purification

I-7N ye-Tellurium yokuKhula kweCrystal kunye nokuCoca

I. Ukunyangwa kweMpathi ekrwada kunye nokuCocwa kwangaphambili

...IiMfuneko zezinto eziphathekayo: Sebenzisa i-tellurium ore okanye i-anode slime (umxholo weTe ≥5%), kukhethwa i-anode slime yobhedu enyibilikisayo (equlethe i-Cu₂Te, Cu₂Se) njengezinto ezikrwada.
...Inkqubo yoNyango lwangaphambili:
Ukutyunyuzwa kwe-coarse kwi-particle size ≤5mm, ilandelwa yibhola yokugaya ukuya kwi-≤200 mesh;
Ukwahlulwa kwemagnethi (imagnetic field intensity ≥0.8T) ukususa i-Fe, i-Ni, kunye nezinye izinto ezingcolileyo;
I-Froth flotation (pH = 8-9, abaqokeleli be-xanthate) ukwahlula i-SiO₂, i-CuO, kunye nezinye izinto ezingcolileyo ezingenamagnetic.
...Ukulumkela: Kunqande ukungenisa ukufuma ngexesha lonyango lwangaphambili olumanzi (lufuna ukomiswa phambi kokuqhotswa); lawula ukufuma kwendawo ≤30%.

...Iiparamitha zeNkqubo:
Iqondo lokushisa lokutshisa i-Oxidation: 350-600 ° C (ulawulo oluhleliweyo: ubushushu obuphantsi be-desulfurization, ubushushu obuphezulu be-oxidation);
Ixesha lokutshisa: iiyure ze-6-8, kunye ne-O₂ isantya sokuhamba kwe-5-10 L / min;
I-Reagent: I-asidi ye-sulfuric egxininisiweyo (98% H₂SO₄), umlinganiselo wobunzima Te₂SO₄ = 1:1.5.
...Ukusabela kweMichiza:
Cu2Te+2O2+2H2SO4→2CuSO4+TeO2+2H2OCu2Te+2O2+2H2 SO4→2CuSO4+TeO2+2H2O
...Ukulumkela: Lawula iqondo lobushushu ≤600°C ukunqanda i-TeO₂ i-volatilization (indawo yokubilisa 387°C); phatha igesi ephumayo ngezikhuhla zeNaOH.

II. Ukucoca i-Electrorefining kunye neVacuum Disstillation

...Inkqubo ye-Electrolyte:
Ukuqulunqwa kwe-Electrolyte: H₂SO₄ (80–120g/L), iTeO₂ (40–60g/L), i-additive (gelatin 0.1–0.3g/L);
Ulawulo lobushushu: 30–40°C, isantya sokuhamba komjikelezo 1.5–2 m³/h.
...Iiparamitha zeNkqubo:
Uxinaniso lwangoku: 100–150 A/m², amandla ombane weseli 0.2–0.4V;
Isithuba se-Electrode: 80-120mm, ubukhulu be-cathode deposition 2-3mm / 8h;
Ukusebenza kokususa ukungcola: Cu ≤5ppm, Pb ≤1ppm.
...Ukulumkela: Fifa rhoqo i-electrolyte (ukuchaneka ≤1μm); Ipolishi yomgangatho we anode ngomatshini ukuthintela ukudlula.

...Iiparamitha zeNkqubo:
Inqanaba le-vacuum: ≤1×10⁻²Pa, iqondo lobushushu be-distillation 600–650°C ;
Ubushushu bommandla weCondenser: 200-250 ° C, umphunga we-Te vapor condensation ukusebenza kakuhle ≥95%;
Ixesha le-distillation: 8-12h, umthamo webhetshi enye ≤50kg.
...Ukusasazwa kokungcola: Ukungcola okubilisa kancinci (Se, S) kuqokelelana kumphambili wecondenser; ukungcola okubilisa kakhulu (Pb, Ag) kuhlala kwiintsalela .
...Ukulumkela‌: Inkqubo yokufunxa yangaphambi kwempompo ukuya ≤5×10⁻³Pa phambi kokufudumeza ukunqanda i-Te oxidation.

III. Ukukhula kweCrystal (ICrystallization yeDirectional).

...Imifuziselo yeCrystal yokuKhula kwesithando somliloTDR-70A/B (30kg umthamo) okanye TRDL-800 (60kg umthamo);
Izinto eziphathekayo: I-graphite ecocekileyo (umxholo womlotha ≤5ppm), imilinganiselo Φ300 × 400mm;
Indlela yokufudumeza: Ukufudumala kwegraphite, ubushushu obukhulu be-1200 ° C.

...Ulawulo lwenyibilika:
Ubushushu obunyibilikayo: 500–520°C, ubunzulu bechibi lokunyibilika 80–120mm;
Igesi ekhuselayo: I-Ar (ubunyulu ≥99.999%), izinga lokuhamba kwe-10-15 L / min.
...Iiparamitha zeCrystallization:
Isantya sokutsala: 1-3mm / h, isantya sokujikeleza i-crystal 8-12rpm;
Iqondo lokushisa: I-Axial 30-50 ° C / cm, i-radial ≤10 ° C / cm;
Indlela yokupholisa: Isiseko sobhedu esinamanzi (iqondo lobushushu bamanzi li-20-25 ° C), ukupholisa okuphezulu kwe-radiative.

...Ukwahlula Isiphumo: Ukungcola okufana ne-Fe, i-Ni (i-coefficient yokwahlula <0.1) iqokelela kwimida yengqolowa;
...Ukunyibilikisa imijikelo: Imijikelezo ye-3-5, ukungcola okupheleleyo kokugqibela ≤0.1ppm.

Gubungela indawo enyibilikayo kunye neepleyiti zegraphite ukucinezela i-Te volatilization (ixabiso lelahleko ≤0.5%);
Gada idiamitha yekristale ngexesha lokwenyani usebenzisa igeyiji yelaser (ukuchaneka ±0.1mm);
Kuphephe ukuguquguquka kweqondo lobushushu > ± 2°C ukunqanda ukwanda koxinaniso lwe-dislocation (ithagethi ≤10³/cm²) .

IV. Ukuhlolwa koMgangatho kunye neeMetrikhi eziphambili

Into yoVavanyo	Ixabiso eliMgangatho	Indlela yoVavanyo	Umthombo
...Ubunyulu...	≥99.99999% (7N)	I-ICP-MS
...Ubumdaka obupheleleyo beMetallic...	≤0.1ppm	I-GD-MS (i-Glow Discharge Mass Spectrometry)
...Umxholo we-Oxygen...	≤5ppm	Ukufunxwa kwerhasi engasebenziyo-IR
...Ingqibelelo yeCrystal...	Uxinaniso lokuHamba ≤10³/cm²	I-X-reyi yeTografi
...Ukuxhathisa (300K)...	0.1–0.3Ω·cm	Indlela ye-Four-Probe

V. IiProthokholi zokusiNgqongileyo noKhuseleko

Ukutshisa ukukhupha: Ukunciphisa i-SO₂ kunye ne-SeO₂ kunye ne-NaOH scrubbers (pH≥10);
Vacuum distillation exhaust: Condesa kwaye ubuyise umphunga; iigesi ezishiyekileyo ezibhengezwa ngekhabhoni esebenzayo.

I-Anode slime (equlethe i-Ag, i-Au): Ukubuyisela kwakhona nge-hydrometallurgy (inkqubo ye-H₂SO₄-HCl);
Iintsalela ze-Electrolysis (eziqulethe i-Pb, Cu): Buyela kwiinkqubo zokunyibilikisa ubhedu.

Abaqhubi kufuneka banxibe iimaski zegesi (umphunga uyityhefu); gcina i-ventilation yoxinzelelo olubi (izinga lokutshintsha umoya ≥10 imijikelezo / h) .

Imigaqo yeziKhokelo zokuSebenza

...Ukuziqhelanisa neMathiriyeli ekrwada: Lungisa ubushushu bokutshisa kunye nomlinganiselo weasidi ngokuguquguqukayo ngokusekelwe kwimithombo ye-anode slime (umzekelo, ubhedu xa kuthelekiswa nokunyibilikiswa kwelothe);
...Crystal Ukutsalwa Rate Matching: Lungisa isantya sokutsalwa ngokokunyibilika kwenyibilika (inombolo yeReynolds Re≥2000) ukucinezela ukupholisa okukhulu komgaqo-siseko;
...Ukusebenza kakuhle kwamandla: Sebenzisa ukufudumeza kwendawo yobushushu obumbini (indawo engundoqo engu-500°C, indawo engaphantsi kwe-400°C) ukunciphisa ukusetyenziswa kwamandla okumelana negraphite ngama-30%.

Ixesha lokuposa: Mar-24-2025