7N Tellurium Crystal Incrementum et Purificationem

7N Tellurium Crystal Incrementum et Purificationem

I. Rudis Material Pretreatment et Primae Purificationis

1. ‌Rudis Material electio et comminutio‌

• ‌Materia Requisita‌: Utere tellurium chalcitide vel anode fimo (te contentum ≥5%), potius aeris excoquunt anode bitumen (continens Cu₂Te, Cu₂Se) ut materia rudis.
• ‌Processus Pretreatment:
• Crassa contritio ad quantitatem particulae ≤5mm, sequitur pila ad reticulum ≤200 mill;
• Separatio magnetica (campi magnetici intensio ≥0.8T) ad removendum Fe, Ni, et alias immunditias magneticas;
• Froth flotation (pH=8-9, xanthate collectores) separare SiO₂, CuO, aliasque immunitates non magneticae.
• ‌Cautiones‌: In humido pretreatment humorem vitare (requirit siccationem ante torrendum); imperium ambientium humiditas ≤30%.

1. ‌Pyrometallurgicus assatus et oxidatio‌

• ‌Processus Parameters:
• Oxidationis ustus temperatus: 350-600°C (tempus ridiculum: temperatura pro desulfurizatione, caliditas oxidationis);
• Torrendum tempus: 6-8 horas, cum O₂ rate fluunt 5-10 L/min;
• Reagens: Acidum sulphuricum attenti (98% H₂SO₄), ratio massa Te₂SO₄ = 1:1.5.
• ‌Chemical reactionem:
  Cu2Te+2O2+2H2SO4 →2CuSO4+TeO2+2H2OCu2 Te+2O2 +2H2 SO4 →2CuSO4 +TeO2 +2H2 O
• ‌Cautiones‌: Temperatura temperaturae ≤600°C ne TeO volatilisatio (punctum fervens 387°C); tractare exhauriunt Gas cum NaOH scrubbers.

II. Electrorefining et Vacuum Distillation‌

1. ‌Electrorefining‌

• ‌Electrolytus System:
• Electrolyte compositio: H₂SO₄ (80-120g/L), TeO₂ (40–60g/L), additativa (gelatina 0.1–0.3g/L);
• Temperature imperium: 30-40°C, circulatio rate fluit 1.5-2 m³/h .
• ‌Processus Parameters:
• Current densitas: 100-150 A/m², cellula intentione 0.2-0.4V ;
• Electrode spacing: 80-120mm, cathode depositio crassitudo 2-3mm/8h ;
• Immunditia remotionis efficientia: Cu ≤5ppm,Pb ≤1ppm .
• ‌Cautiones‌: Electrolytici regulariter sparguntur (accurate ≤1μm); Mechanice anode polituras superficies ne passionem.

1. ‌Vacuum Distillation‌

• ‌Processus Parameters:
• Vacuum campum: ≤1×10⁻²Pa, distillationis temperatus 600-650°C;
• Zonae condensantis temperies: 200-250°C, condensationis vaporum efficientia ≥95% ;
• Distillationis tempus: 8-12h, una-batch capacitatis ≤50kg.
• ‌Impuritas Distributio‌: immunditias humiles ebullientes (Se, S) ad frontem condenser accumula; altae immunditiae ferventis (Pb, Ag) in residua manent.
• ‌Cautiones‌: Pre-sentinam vacuum ratio ad ≤5×10⁻³Pa ante calefacit ne oxidatio Te .

‌III. Crystal Augmentum (Directional Crystallization) ‌

1. ‌Apparatus configurationis‌

• ‌Crystal Incrementum fornacis exemplum‌: TDR-70A/B (30kg capacitas) vel TRDL-800 (60kg capacitas);
• Materia crucibilis: graphita summus puritatis (cinerum contentum ≤5ppm), dimensionibus Φ300×400mm;
• Methodus calefactionis: Graphite resistentia calefactionis, temperatura maxima MCC°C .

1. ‌Processus Parameters‌

• ‌Confluat Imperium:
• Liquefaciens temperatus: 500-520°C, liquescat stagnum profundum 80-120mm;
• Gas tutela: Ar (puritas ≥99.999%), rate fluxus 10-15 L/min .
• ‌Crystallization Parameters:
• Trahere rate: 1-3mm/h, cristallum gyrationis velocitas 8-12rpm;
• Temperatus gradiens: axialis 30-50°C/cm, radialis ≤10°C/cm;
• Modus refrigerandi: basis aeris aqua refrigerata (aqua temperatura 20-25°C), summitate refrigerationis radiativae.

1. ‌Impudicitia Imperium‌

• ‌Effectus segregationis‌: Impurities ut Fe, Ni (segregatio coefficiens <0.1) cumulatur ad fines frumenti;
• ‌Remelting Cycles‌: 3-5 circuitus, ultimae totali immunditiae ≤0.1ppm .

1. ‌Cautiones:

• Operculum superficies cum graphitis laminis liquefacit ad te volatilizationem supprimendam (rate ≤0.5%);
• Monitor crystallinis diametri in reali tempore utens laser gauges (accuratio ±0.1mm);
• Vitare ambigua temperatura >±2°C ne inordinatio densitatis augeatur (scopum ≤10³/cm²) .

‌IV. Quality inspection and Key Metrics

V. Environmental and Safety Protocols‌

1. ‌Exhauriunt Gas amet:

• Exhaurire ustus: corrumpere SO₂ et SeO₂ cum NaOH scrubbers (pH≥10);
• Vacuum distillationis exhauriunt: Condense et recipe Te vaporem; residua vapores adsorbed per ipsum reducitur.

1. ‌Slag Redivivus:

• Anode bitumen (continens Ag, Au): Recupera per hydrometallurgiam (H₂SO₄-HCl system) ;
• Electrolysis residua (PB, Cu continens): Redi ad systemata aeris excoquunt.

1. ‌Salus Mensurae:

• Operatores larvis gasi uti debent (Te vapor toxicus est); conservationem negativam pressura evacuatione (aeris commutationem rate ≥10 circuitus/h) .

Process Optimization pretium

1. ‌Rudis Material adaptatio‌: Adjust ustionem caliditatis et acidi rationem dynamice fundatam in fontibus anodi limo (exempli gratia aeris vs. plumbi excoquentis);
2. ‌Crystal trahens Rate eu‌: Adjust trahere velocitatem secundum convectionem liquefactionem (Reynolds numerus Re≥2000) ad constitutionalem supercootionem supprimendam;
3. ‌Energy Efficens‌: Zona temperatura duplicata utere calefactione (zona principale 500°C, sub-zona 400°C) ad resistentiam graphiticam reducendam ad consummationem potentiae per 30% .