I-Zinc telluride (ZnTe), into ebalulekile ye-II-VI semiconductor, isetshenziswa kakhulu ekutholeni infrared, amaseli elanga, kanye namadivayisi e-optoelectronic. Intuthuko yakamuva ku-nanotechnology kanye ne-green chemistry ithuthukise ukukhiqizwa kwayo. Ngezansi izinqubo zamanje zokukhiqiza ze-ZnTe ezivamile kanye nemingcele eyinhloko, okuhlanganisa izindlela zendabuko kanye nentuthuko yesimanje:
____________________________________________________
I. Inqubo Yokukhiqiza Yendabuko (I-Direct Synthesis)
1. Ukulungiselela Impahla Engavuthiwe
• I-High-purity zinc (Zn) ne-tellurium (Te): Ukuhlanzeka ≥99.999% (ibanga le-5N), kuxutshwe ngesilinganiso se-molar esingu-1:1.
• Igesi evikelayo: I-High-purity argon (Ar) noma i-nitrogen (N₂) ukuze kuvinjelwe i-oxidation.
2. Ukugeleza Kwenqubo
• Isinyathelo 1: I-Vacuum Melting Synthesis
o Hlanganisa i-Zn ne-Te powders eshubhuni le-quartz bese uphuma uye ku-≤10⁻³ Pa.
o Uhlelo lokushisisa: Shisisa ku-5–10°C/min kuya ku-500–700°C, ubambe amahora angu-4–6.
o Izibalo zokusabela:Zn+Te→ΔZnTeZn+TeΔZnTe
• Isinyathelo sesi-2: Ukuhlanganisa
o Faka umkhiqizo ongahluziwe ku-400-500°C amahora angu-2-3 ukuze unciphise ukonakala kwe-lattice.
• Isinyathelo sesi-3: Ukuchotshozwa nokuhlungwa
o Sebenzisa umshini wokugaywa webhola ukuze ugaye impahla eyinqwaba ifike kusayizi wezinhlayiyana eziqondiwe (ukugaya ibhola elinamandla amakhulu we-nanoscale).
3. Amapharamitha abalulekile
• Ukunemba kokulawula izinga lokushisa: ±5°C
• Izinga lokupholisa: 2–5°C/min (ukugwema imifantu yengcindezi yokushisa)
• Usayizi wezinhlayiyana zezinto ezingavuthiwe: Zn (100–200 mesh), Te (200–300 mesh)
____________________________________________________
II. Inqubo Yesimanje Ethuthukisiwe (Indlela Ye-Solvothermal)
Indlela ye-solvothermal iyindlela evamile yokukhiqiza i-nanoscale ZnTe, enikeza izinzuzo ezifana nosayizi wezinhlayiyana olawulekayo kanye nokusetshenziswa kwamandla okuphansi.
1. Izinto ezisetshenziswayo kanye nezincibilikisi
• Ama-Precursors: I-Zinc nitrate (Zn(NO₃)₂) ne-sodium tellurite (Na₂TeO₃) noma i-tellurium powder (Te).
• Ama-ejenti okwehlisa: I-Hydrazine hydrate (N₂H₄·H₂O) noma i-sodium borohydride (NaBH₄).
• Izincibilikisi: I-Ethylenediamine (EDA) noma amanzi e-deionized (amanzi e-DI).
2. Ukugeleza Kwenqubo
• Isinyathelo 1: Ukuqedwa Kwesandulela
o Chaza i-Zn(NO₃)₂ kanye ne-Na₂TeO₃ ngesilinganiso esingu-1:1 se-molar ku-solvent ngaphansi kokunyakaziswa.
• Isinyathelo sesi-2: Ukusabela Kokunciphisa
o Engeza i-ejenti yokunciphisa (isb, N₂H₄·H₂O) bese uvala i-autoclave enengcindezi ephezulu.
o Izimo zokusabela:
Izinga lokushisa: 180–220°C
Isikhathi: Amahora angu-12–24
Ingcindezi: Zizenzele (3–5 MPa)
o Izibalo zokusabela:Zn2++TeO32−+I-ejenti yokunciphisa→I-ZnTe+Byproducts (isb, H₂O, N₂)Zn2++TeO32−+I-ejenti yokunciphisa→ZnTe+Byproducts (isb, H₂O, N₂)
• Isinyathelo sesi-3: Ngemva kokwelashwa
o I-Centrifuge yokuhlukanisa umkhiqizo, geza izikhathi ezi-3-5 nge-ethanol namanzi e-DI.
o Yomisa ngaphansi kwevacuum (60-80°C amahora ama-4-6).
3. Amapharamitha abalulekile
• Ukugxila kwe-Precursor: 0.1–0.5 mol/L
• Ukulawulwa kwe-pH: 9–11 (izimo ze-alkaline zivumela ukusabela)
• Ukulawula usayizi wezinhlayiyana: Lungisa usebenzisa uhlobo lwe-solvent (isb, i-EDA ikhiqiza ama-nanowires; isigaba se-aqueous sikhiqiza ama-nanoparticles).
____________________________________________________
III. Ezinye Izinqubo Ezithuthukile
1. I-Chemical Vapor Deposition (CVD)
• Ukusetshenziswa: Ukulungiswa kwefilimu encane (isb, amaseli elanga).
• Ama-Precursors: I-Diethylzinc (Zn(C₂H₅)₂) ne-diethyltellurium (Te(C₂H₅)₂).
• Amapharamitha:
o Izinga lokushisa lokubeka: 350–450°C
o Igesi yenkampani: Ingxube ye-H₂/Ar (izinga lokugeleza: 50–100 sccm)
o Ingcindezi: 10⁻²–10⁻³ Torr
2. I-Mechanical Alloying (I-Ball Milling)
• Izici: I-solvent-free, i-low-temperature synthesis.
• Amapharamitha:
o Isilinganiso sebhola-kuya-mpushana: 10:1
o Isikhathi sokugaya: amahora angama-20-40
o Isivinini sokujikeleza: 300–500 rpm
____________________________________________________
IV. Ukulawulwa Kwekhwalithi Nokwenza Izinhlamvu
1. Ukuhlaziywa kobumsulwa: I-X-ray diffraction (XRD) yesakhiwo sekristalu (isilinganiso esiphezulu ku-2θ ≈25.3 °).
2. Ukulawulwa kwe-morphology: I-Transmission electron microscopy (TEM) yosayizi we-nanoparticle (okujwayelekile: 10–50 nm).
3. Isilinganiso se-elemental: I-X-ray spectroscopy (EDS) ene-Energy-dispersive (EDS) noma i-plasma mass spectrometry ehlanganisiwe (ICP-MS) ukuze kuqinisekiswe i-Zn ≈1:1.
____________________________________________________
V. Ukucatshangelwa Kokuphepha Nendawo Ezungezile
1. Ukwelashwa kwegesi engcolile: Gcoba i-H₂Te ngezisombululo ze-alkaline (isb, i-NaOH).
2. Ukubuyiswa kwe-solvent: Sebenzisa kabusha izincibilikisi zemvelo (isb, i-EDA) ngokusebenzisa izihluzi.
3. Izinyathelo zokuzivikela: Sebenzisa imaski yegesi (ukuvikela i-H₂Te) kanye namagilavu amelana nokugqwala.
____________________________________________________
VI. Amathrendi Ezobuchwepheshe
• I-Green synthesis: Thuthukisa izinhlelo ze-aqueous-phase ukuze unciphise ukusetshenziswa kwe-organic solvent.
• Ukuguqulwa kwe-Doping: Thuthukisa ukusebenza ngokudotshwa nge-Cu, Ag, njll.
• Ukukhiqizwa kwesilinganiso esikhulu: Sebenzisa ama-reactors-flowous-flow ukuze uzuze ama-kg-scale batches.
Isikhathi sokuthumela: Mar-21-2025