1. Ukuthuthukiswa Kokulungiselelwa Kwezinto Ezihlanzeke Kakhulu
Izinto Ezisekelwe Ku-Silicon: Ukuhlanzeka kwekristalu eyodwa ye-silicon kudlule u-13N (99.9999999999%) kusetshenziswa indlela yendawo entantayo (FZ), okuthuthukisa kakhulu ukusebenza kwamadivayisi we-semiconductor yamandla aphezulu (isb, IGBTs) nama-chips athuthukisiwe45. Lobu buchwepheshe bunciphisa ukungcoliswa komoyampilo ngenqubo engena-crucible futhi buhlanganisa i-silane CVD kanye nezindlela eziguquliwe ze-Siemens ukuze kuzuzwe ukukhiqizwa okuphumelelayo kwe-zone-melting-grade polysilicon 47.
Izisetshenziswa ze-Germanium : Ukuhlanzeka okuncibilikisiwe kwendawo kukhuphule ukuhlanzeka kwe-germanium ku-13N, ngama-coefficients okusabalalisa ukungcola athuthukisiwe, okuvumela ukusetshenziswa ku-infrared optics nezitholi zemisebe23. Kodwa-ke, ukusebenzisana phakathi kwe-germanium encibilikisiwe nezinto zemishini emazingeni okushisa aphezulu kuseyinselelo ebucayi.
2. Okusunguliwe Kunqubo Namathuluzi
I-Dynamic Parameter Control: Ukulungiswa kokuncibilika kwesivinini sokunyakaza kwendawo, ama-gradients okushisa, nezindawo zegesi ezivikelayo—okuhlanganiswe nokuqapha kwesikhathi sangempela nezinhlelo zokuphendula ezizenzakalelayo—kuthuthukise ukuzinza kwenqubo nokuphindaphinda ngenkathi kunciphisa ukusebenzisana phakathi kwe-germanium/silicon nemishini27.
Ukukhiqizwa Kwe-Polysilicon: Izindlela ezintsha zokukala ze-zone-melting-grade polysilicon zibhekana nezinselelo zokulawula okuqukethwe komoyampilo ezinqubweni zendabuko, ukunciphisa ukusetshenziswa kwamandla kanye nokukhulisa isivuno47.
3. Ukuhlanganiswa Kwezobuchwepheshe kanye Nezicelo Zokuqondiswa kwezigwegwe
I-Melt Crystallization Hybridization: Amasu ancibilikisa amandla aphansi ayahlanganiswa ukuze kuthuthukiswe ukuhlukaniswa kwenhlanganisela yezinto eziphilayo kanye nokuhlanzwa, ukunwetshwa kwezicelo zokuncibilika kwendawo emikhakheni yemithi kanye namakhemikhali amahle6.
Ama-Semiconductors Esizukulwane Sesithathu: Ukuncibilika kwendawo manje sekusetshenziselwa izinto ezinama-bandgap abanzi njenge-silicon carbide (SiC) kanye ne-gallium nitride (GaN), esekela ama-high-frequency kanye namadivayisi asezingeni eliphezulu. Isibonelo, ubuchwepheshe besithando somlilo se-liquid-crystal single-crystal buvumela ukukhula okuzinzile kwekristalu ye-SiC ngokulawula izinga lokushisa okunembile
4. Izimo Zokusebenza Ezihlukahlukene
Ama-Photovoltaics: I-polysilicon ye-Zone-melting-grade isetshenziswa kumaseli elanga asebenza kahle kakhulu, ifinyelela ukusebenza kahle kokuguqulwa kwe-photoelectric ngaphezu kuka-26% kanye nokuqhubela phambili kumandla avuselelekayo4.
I-Infrared and Detector Technologies: I-Ultra-high-purity germanium inika amandla i-miniaturized, i-high-performance imaging ye-infrared kanye namadivayisi okubona ebusuku kwezempi, ukuphepha, kanye nezimakethe zomphakathi.23.
5. Izinselele kanye Nezikhombisi-ndlela Ezizayo
Imikhawulo Yokususa Ukungcola: Izindlela zamanje zidonsa kanzima ekukhipheni ukungcola kwe-elementi yokukhanya (isb, i-boron, i-phosphorus), edinga izinqubo ezintsha ze-doping noma ubuchwepheshe bokulawula indawo encibilikayo.25.
Ukuqina Kwezisetshenziswa Nokusebenza Kahle Kwezamandla Ubuchwepheshe be-vacuum arc remelting (VAR) bubonisa isithembiso sokucwengwa kwensimbi47.
Ubuchwepheshe be-Zone melting buthuthukela ekuhlanzekeni okuphezulu, izindleko eziphansi, kanye nokusebenza okubanzi, kuqinisa indima yabo njengetshe legumbi kuma-semiconductors, amandla avuselelekayo, kanye nama-optoelectronics
Isikhathi sokuthumela: Mar-26-2025