I-Zinc telluride (ZnTe), into ebalulekileyo ye-II-VI ye-semiconductor, isetyenziswa ngokubanzi ekuboneni i-infrared, iiseli zelanga, kunye nezixhobo ze-optoelectronic. Inkqubela phambili yamva nje kwi-nanotechnology kunye ne-green chemistry iphucule imveliso yayo. Ngezantsi ziinkqubo zemveliso zeZnTe eziphambili kunye neeparitha eziphambili, kubandakanya iindlela zemveli kunye nokuphuculwa kwanamhlanje:
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I. Inkqubo yeMveliso yesiNtu (iNdibaniselwano eNgqo)
1. Ukulungiswa kwezinto ezikrwada
• I-zinc ecocekileyo (i-Zn) kunye ne-tellurium (Te): Ubunyulu ≥99.999% (i-5N grade), ixutywe kwi-1: 1 ye-molar ratio.
• Igesi ekhuselayo: I-argon ephezulu (i-Ar) okanye i-nitrogen (N₂) ukukhusela i-oxidation.
2. UkuHamba kweNkqubo
• Inyathelo loku-1: I-vacuum Melting Synthesis
o Xuba uZn kunye nomgubo weTe kwityhubhu yequartz kwaye uphume uye ku-≤10⁻³ Pa.
o Inkqubo yokufudumala: Ukufudumala kwi-5-10 ° C / min ukuya kwi-500-700 ° C, ubambe iiyure ze-4-6.
o Ireaction equation:Zn+Te→ΔZnTeZn+TeΔZnTe
• Inyathelo lesi-2: Ukudibanisa
o Yosula imveliso ekrwada ku-400–500°C kangangeeyure ezi-2–3 ukunciphisa iziphene zelathisi.
• Inyathelo lesi-3: Ukutyumza nokuhluzwa
o Sebenzisa i-ball mill ukugaya izinto ezininzi ukuya kwi-particle target size (high-energy ball milling for nanoscale).
3. Iiparamitha eziphambili
• Ukuchaneka kokulawula ubushushu: ±5°C
• Izinga lokupholisa: 2–5°C/min (ukunqanda ukuqhekeka koxinzelelo lobushushu)
• Ubungakanani bamasuntswana ezinto ezikrwada: Zn (100–200 mesh), Te (200–300 mesh)
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II. Inkqubo yangoku ephuculweyo (iNdlela yeSolvothermal)
Indlela ye-solvothermal yindlela eqhelekileyo yokuvelisa i-nanoscale ZnTe, enika iingenelo ezifana nobungakanani besuntswana elilawulekayo kunye nokusetyenziswa kwamandla aphantsi.
1. Izinto ezikrwada kunye nezinyibilikisi
• I-Precursors: I-Zinc nitrate (Zn(NO₃)₂) kunye ne-sodium tellurite (Na₂TeO₃) okanye i-tellurium powder (Te).
• Ii-arhente zokunciphisa: I-Hydrazine hydrate (N₂H₄·H₂O) okanye i-sodium borohydride (NaBH₄).
• Izinyibilikisi: I-Ethylenediamine (EDA) okanye amanzi adiyiniweyo (amanzi e-DI).
2. UkuHamba kweNkqubo
• Inyathelo loku-1: Ukupheliswa kwe-Precursor
o Dissolve Zn(NO₃)₂ kunye ne-Na₂TeO₃ kwi-1: 1 i-molar ratio kwi-solvent phantsi kokuvuselela.
• INyathelo 2: UkuNcitshiswa kweSabelo
o Yongeza i-arhente yokunciphisa (umz., N₂H₄·H₂O) kwaye utywine kwi-autoclave yoxinzelelo oluphezulu.
o Iimeko zokusabela:
Ubushushu: 180–220°C
Ixesha: iiyure eziyi-12–24
Uxinzelelo: Uzivelisele ngokwakho (3–5 MPa)
o Ireaction equation:Zn2++TeO32−+arhente yokunciphisa→ZnTe+Byproducts (umz., H₂O, N₂)Zn2++TeO32−+I-arhente yokunciphisa→ZnTe+Byproducts (umz., H₂O, N₂)
• Inyathelo lesi-3: Emva konyango
o I-Centrifuge yokuhlukanisa imveliso, hlamba amaxesha angama-3-5 nge-ethanol kunye namanzi e-DI.
o Yomisa ngaphantsi kwevacuum (60–80°C iiyure ezi-4–6).
3. Iiparamitha eziphambili
• Ugxininiso lwangaphambili: 0.1–0.5 mol/L
• Ulawulo lwe-pH: 9–11 (imeko zealkaline zivumela ukusabela)
• Ulawulo lobungakanani besuntswana: Lungisa ngokusebenzisa uhlobo lwesinyibilikisi (umzekelo, i-EDA ivelisa iinanowires; isigaba esimanzi sivelisa iinanoparticles).
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III. Ezinye Iinkqubo Ezikwinqanaba Eliphambili
1. Ukubekwa kweChemical Vapor (CVD)
• Ukusetyenziswa: Ukulungiswa kwefilimu encinci (umzekelo, iiseli zelanga).
• I-Precursors: I-Diethylzinc (Zn(C₂H₅)₂) kunye ne-diethyltellurium (Te(C₂H₅)₂).
• Iiparamitha:
o Ubushushu bendawo: 350–450°C
o Irhasi yokuthwala: H₂/Ar umxube (umyinge wokuhamba: 50–100 sccm)
o Uxinzelelo: 10⁻²–10⁻³ Torr
2. Ukufakwa kwe-Mechanical Alloying (iBall Milling)
• Iimpawu: I-solvent-free, ubushushu obuphantsi synthesis.
• Iiparamitha:
o Umlinganiselo webhola ukuya kumgubo: 10:1
o Ixesha lokugaya: 20-40 iiyure
o Isantya sokujikeleza: 300-500 rpm
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IV. Ulawulo loMgangatho kunye neempawu zobuntu
1. Uhlalutyo lokucoceka: I-X-ray diffraction (XRD) yesakhiwo se-crystal (incopho enkulu kwi-2θ ≈25.3 °).
2. Ukulawulwa kwe-Morphology: Ukuhanjiswa kwe-electron microscopy (TEM) yesayizi ye-nanoparticle (eqhelekileyo: 10-50 nm).
3. Umlinganiselo we-Elemental: I-Energy-dispersive X-ray spectroscopy (EDS) okanye i-inductively coupled plasma mass spectrometry (ICP-MS) ukuqinisekisa i-Zn ≈1: 1.
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V. Iingqwalasela zoKhuseleko nokusiNgqongileyo
1. Ukunyangwa kwegesi yenkunkuma: Funxa i-H₂Te ngezisombululo zealkaline (umz., NaOH).
2. Ukubuyisela ukunyibilika: Hlaziya izinyibilikisi ze-organic (umzekelo, i-EDA) ngokusebenzisa i-distillation.
3. Amanyathelo okukhusela: Sebenzisa iimaski zegesi (ukukhusela i-H₂Te) kunye neiglavu ezinganyangekiyo kwi-corrosion.
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VI. Iindlela zeTekhnoloji
• I-Green synthesis: Phuhlisa iinkqubo zesigaba samanzi ukunciphisa ukusetyenziswa kwe-organic solvent.
• Ukuguqulwa kwe-doping: Ukuphucula i-conductivity ngokusebenzisa i-Cu, i-Ag, njl.
• Imveliso enkulu: Yamkela i-continuous-flow reactors ukuphumeza iibhetshi zesikali se-kg.
Ixesha lokuposa: Mar-21-2025