Zinc telluride (ZnTe), yakakosha II-VI semiconductor zvinhu, inoshandiswa zvakanyanya mukuona infrared, masero ezuva, uye optoelectronic zvishandiso. Kufambira mberi kwazvino mu nanotechnology uye green chemistry yakagonesa kugadzirwa kwayo. Pazasi pane azvino maitiro ekugadzirwa kweZnTe uye zvakakosha paramita, kusanganisira nzira dzechinyakare nekuvandudzwa kwemazuva ano:
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I. Traditional Production process (Yakananga Synthesis)
1. Raw Material Kugadzirira
• High-purity zinc (Zn) uye tellurium (Te): Kuchena ≥99.999% (5N grade), yakasanganiswa mu1: 1 molar ratio.
• Gasi rekudzivirira: High-purity argon (Ar) kana nitrogen (N₂) kudzivirira oxidation.
2. Process Flow
• Danho 1: Vacuum Melting Synthesis
o Sanganisa Zn neTe poda muchubhu yequartz wobuda kuenda ku ≤10⁻³ Pa.
o Kupisa purogiramu: Kupisa pa 5-10 ° C / min kusvika 500-700 ° C, bata kwemaawa 4-6.
o Reaction equation:Zn+Te→ΔZnTeZn+TeΔZnTe
• Danho rechipiri: Anealing
o Chengetedza crude product pa400–500°C kwemaawa maviri–3 kuti uderedze kukanganiswa kwelatisi.
• Danho rechitatu: Kupwanya nekusefa
o Shandisa chigayo chebhora kukuya zvinhu zvakawanda kusvika pakukura kwechikamu chinotarirwa (high-energy ball milling for nanoscale).
3. Key Parameters
• Kunyatsoita tembiricha: ±5°C
• Mwero wekutonhodza: 2–5°C/min (kuitira kudzivirira kupisa kwekushushikana kutsemuka)
• Saizi yezvimedu zvimedu: Zn (100–200 mesh), Te (200–300 mesh)
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II. Mazuvano Akavandudzwa Maitiro (Solvothermal Method)
Iyo solvothermal nzira ndiyo yakajairwa nzira yekugadzira nanoscale ZnTe, ichipa zvakanakira senge inodzoreka particle saizi uye yakaderera simba rekushandisa.
1. Raw Materials uye Solvents
• Precursors: Zinc nitrate (Zn (NO₃) ₂) uye sodium tellurite (Na₂TeO₃) kana tellurium powder (Te).
• Zvinoderedza mishonga: Hydrazine hydrate (N₂H₄·H₂O) kana sodium borohydride (NaBH₄).
• Solvents: Ethylenediamine (EDA) kana mvura yakasvibiswa (DI mvura).
2. Process Flow
• Danho 1: Precursor Dissolution
o Dissolve Zn(NO₃)₂ uye Na₂TeO₃ muchiyero che1: 1 molar mune zvinonyungudutsa pasi pekukurudzira.
• Danho 2: Kuderedza Kuita
o Wedzera iyo inoderedza mumiriri (semuenzaniso, N₂H₄·H₂O) uye isa chisimbiso mune yakakwira-pressure autoclave.
o Maitiro ekuita:
Tembiricha: 180–220°C
Nguva: 12-24 maawa
Kudzvinyirira: Kuzvigadzira (3-5 MPa)
o Rection equation:Zn2++TeO32−+Mumiririri→ZnTe+Byproducts (semuenzaniso, H₂O, N₂)Zn2++TeO32−+Mushonga →ZnTe+Byproducts (eg, H₂O, N₂)
• Danho rechitatu: Mushure mekurapwa
o Centrifuge kuparadzanisa chigadzirwa, geza 3-5 nguva ne ethanol uye DI mvura.
o Pukuta pasi pevacuum (60–80°C kwemaawa 4–6).
3. Key Parameters
• Precursor concentration: 0.1–0.5 mol/L
• pH kudzora: 9–11 (alkaline mamiriro anofarira kuita)
• Particle size control: Gadzirisa nerudzi rwe solvent (semuenzaniso, EDA inobereka nanowires; aqueous phase inobereka nanoparticles).
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III. Mamwe Maitirwo Epamusoro
1. Chemical Vapor Deposition (CVD)
• Kushandisa: Kugadzirira kwefirimu-tete (semuenzaniso, masero ezuva).
• Precursors: Diethylzinc (Zn(C₂H₅)₂) uye diethyltellurium (Te(C₂H₅)₂).
• Parameters:
o Deposition tembiricha: 350–450°C
o Inotakura gasi: H₂/Ar musanganiswa (kuyerera mwero: 50–100 sccm)
o Kudzvinyirira: 10⁻²–10⁻³ Torr
2. Mechanical Alloying (Ball Milling)
• Zvinoumba: Solvent-isina, yakaderera-tembiricha synthesis.
• Parameters:
o Bhora-ku-hupfu chiyero: 10:1
o Nguva yekugaya: 20-40 maawa
o Kutenderera kumhanya: 300-500 rpm
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IV. Kudzora Hunhu uye Hunhu
1. Kuchena kwekuongorora: X-ray diffraction (XRD) yekristal structure (main peak pa 2θ ≈25.3 °).
2. Morphology control: Transmission electron microscopy (TEM) ye nanoparticle size (yakajairika: 10-50 nm).
3. Elemental ratio: Energy-dispersive X-ray spectroscopy (EDS) kana inductively yakabatanidzwa plasma mass spectrometry (ICP-MS) kusimbisa Zn ≈1: 1.
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V. Kuchengetedza uye Kufunga Kwezvakatipoteredza
1. Kurapa gasi remarara: Bvisa H₂Te nemhinduro dzealkaline (semuenzaniso, NaOH).
2. Solvent recovery: Recycle organic solvents (eg, EDA) kuburikidza ne distillation.
3. Matanho ekudzivirira: Shandisa masiki egasi (nokudzivirira H₂Te) uye magirovhosi asingadziviriri.
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VI. Technology Trends
• Green synthesis: Gadzira aqueous-phase systems kuderedza kushandiswa kwe organic solvent.
• Doping gadziriso: Wedzerai conductivity nedoping neCu, Ag, nezvimwe.
• Kugadzirwa kwakakura: Gamuchira zvinoramba zvichiyerera-kuyerera kuti uwane kg-chiyero mabhechi.
Nguva yekutumira: Mar-21-2025